2.5 MU-M GAINASSB LATTICE-MATCHED TO GASB BY LIQUID-PHASE EPITAXY

被引：30

作者：

TOURNIE, E ^{[1
]}

LAZZARI, JL ^{[1
]}

PITARD, F ^{[1
]}

ALIBERT, C ^{[1
]}

JOULLIE, A ^{[1
]}

LAMBERT, B ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaSb lattice-matched Ga1-xInxAsySb 1-y has been grown by liquid phase epitaxy on (100) and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30°C, at growth temperatures >600°C. It is shown that the band-gap cutoff wavelength, measured at room temperature by the electroreflectance method, is ∼2.38 μm for (100) layers whatever ΔT, and increases from 2.38 μm up to 2.51 μm for (111)B oriented layers when ΔT is increased from 15 to 25°C. Photoluminescence experiments at 2 K confirm the band-gap reduction occurring at high ΔT with the (111)B orientation.

引用

页码：5936 / 5938

页数：3

共 16 条

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Andreev I. A., 1988, Soviet Technical Physics Letters, V14, P435

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