RESONANT RAMAN-SCATTERING AND EXCITON-PHONON INTERACTIONS IN AGGASE2

被引：18

作者：

CHOI, IH

YU, PY

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] CHUNG ANG UNIV,DEPT PHYS,SEOUL,SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.49.16407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Enhancements in Raman-scattering cross sections of phonon modes in AgGaSe2 have been observed both at room temperature and at liquid-nitrogen temperature. At low temperature the observed enhancements can be explained by outgoing resonances of the scattered photons at the lowest-energy free exciton. At resonance, multiphonon modes involving as many as three longitudinal-optical (LO) phonons have been observed. Exciton energy and damping constant and relative strengths of exciton-LO-phonon (Frohlich) interactions in AgGaSe2 have been determined.

引用

页码：16407 / 16414

页数：8

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