Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide

被引：24

作者：

Khanna, SM

Jorio, A

Carlone, C

Parenteau, M

Houdayer, A

Gerdes, JW

机构：

[1] UNIV SHERBROOKE,DEPT PHYS,SHERBROOKE,PQ J1K 2R1,CANADA

[2] UNIV MONTREAL,DEPT PHYS,MONTREAL,PQ H3C 3J7,CANADA

[3] USA,PULSE RADIAT FACIL,ABERDEEN,MD 21005

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.489258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relative introduction rate of the gallium vacancy in n-type GaAs irradiated with Co-60 gamma rays, 7 MeV electrons, fusion (14 MeV) and fission (1 MeV) neutrons, protons (0.6 to 200 MeV), deuterons (1 to 10 MeV), alpha particles (2.5 to 10 MeV), lithium (5 to 20 MeV) and oxygen ions (10 to 30 MeV) has been determined. Effects of annealing are reported. The measured introduction rates obtained with proton irradiation for energies up to 10 MeV, and for the heavy ions agree reasonably well with Rutherford scattering, NIEL calculations and the TRIM simulation. The results for electron irradiation also agree with the corresponding NIEL calculations.

引用

页码：2095 / 2103

页数：9

共 15 条

[11] RADIATION EFFECTS ON MICROELECTRONICS IN SPACE [J].