SNO2-SI PHOTOSENSITIVE DIODES

被引：10

作者：

KATO, H

FUJIMOTO, J

KANDA, T

YOSHIDA, A

ARIZUMI, T

机构：

[1] NAGOYA MUNICIPAL IND RES INST,NAGOYA,JAPAN

[2] NAGOYA UNIV,DEPT ELECTR,NAGOYA,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssa.2210320129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：255 / 261

页数：7

相关论文

共 11 条

[1] ARIZUMI T, 1974, 4TH P IR C EL ENG, V2, P996
[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[3] CURRIN CG, 1969, Patent No. 3474304
[4] FILLARD JP, 1970, P INT C PHYS CHEM SE, V1, P139
[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
[J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87
[6] ELECTRICAL AND OPTICAL PROPERTIES OF SNO2-SI HETEROJUNCTIONS
KAJIYAMA, K
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (07) : 905 - &
[7] METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[8] ELECTRICAL AND OPTICAL PROPERTIES OF SI-SNO2 HETEROJUNCTIONS
NISHINO, T
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1085 - &
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO
[10] WANG EY, 1973, P INT C SUN SERVICE, P89