REFERENCE FIELD-EFFECT TRANSISTORS BASED ON CHEMICALLY MODIFIED ISFETS

被引：28

作者：

SKOWRONSKAPTASINSKA, M ^{[1
]}

VANDERWAL, PD ^{[1
]}

VANDENBERG, A ^{[1
]}

BERGVELD, P ^{[1
]}

SUDHOLTER, EJR ^{[1
]}

REINHOUDT, DN ^{[1
]}

机构：

[1] TWENTE UNIV,BIOINFORMAT LAB,7500 AE ENSCHEDE,NETHERLANDS

来源：

ANALYTICA CHIMICA ACTA | 1990年 / 230卷 / 01期

关键词：

D O I：

10.1016/S0003-2670(00)82762-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (≤1 mV pH-1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated. © 1990.

引用

页码：67 / 73

页数：7

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