ELECTRONIC-STRUCTURE OF (100) SEMICONDUCTOR HETEROJUNCTIONS

被引：30

作者：

PLATERO, G

SANCHEZDEHESA, J

TEJEDOR, C

FLORES, F

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90885-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：553 / 557

页数：5

共 20 条

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[3] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[4] ENERGY BARRIERS AND INTERFACE STATES AT HETEROJUNCTIONS
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[5] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION
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[6] EFFECTIVE TWO-DIMENSIONAL HAMILTONIAN AT SURFACES
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[J]. PHYSICAL REVIEW B, 1983, 28 (08) : 4397 - 4402
[7] SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (33): : 6499 - 6512
[8] ELEMENTARY THEORY OF HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[9] ELECTRONIC-STRUCTURE OF THE [001] INAS-GASB SUPER-LATTICE
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[J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4120 - 4125
[10] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS
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[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956

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