CN(X) FILMS DEPOSITED BY LASER-ABLATION OF GRAPHITE UNDER LOW-ENERGY NITROGEN-ION BEAM BOMBARDMENT

被引：13

作者：

REN, ZM

XIONG, XX

DU, YC

WU, JD

YING, ZF

QIU, YX

LI, FM

机构：

[1] State Key Joint Laboratory for Material Modification by Laser Ion and Electron Beams, Fudan University, Shanghai

来源：

CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 07期

关键词：

D O I：

10.1088/0256-307X/11/7/017

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Deposition of CN(x) thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.

引用

页码：461 / 464

页数：4

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