A GAAS SURFACE AFTER ITS CONTACT WITH AN UNDERSATURATED AL-GA-AS LIQUID - OBSERVATION AFTER ANODIC-OXIDATION

被引：9

作者：

BOLKHOVITYANOV, YB

BOLKHOVITYANOVA, RI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 99卷 / 01期

关键词：

D O I：

10.1002/pssa.2210990119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：159 / 164

页数：6

共 8 条

[1]

BOLKHOVITYANOV YB, 1986, ZH TEKH FIZ+, V56, P601

[2] A MULTIPURPOSE GRAPHITE BOAT FOR LPE GROWTH OF MULTILAYER HETEROSTRUCTURES [J].

BOLKHOVITYANOV, YB ;

BOLKHOVITYANOVA, RI ;

HAIRI, EH ;

CHIKICHEV, SI ;

YUDAEV, VI .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (12) :1491-1499

[3]

BOLKHOVITYANOV YB, 1984, ROST POLUPROVODNIKOV, V1, P54

[4] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[5] CONTACT ANGLES BETWEEN III-V MELTS AND SEVERAL SUBSTRATES [J].

KONIG, U ;

KECK, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :685-686

[6] ISOTHERMAL LPE GROWTH OF THIN GRADED BAND-GAP ALXGA1-X AS LAYERS [J].

KORDOS, P ;

PEARSON, GL ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6902-6906

[7] THE DISSOLUTION KINETICS OF GAAS IN UNDERSATURATED ISOTHERMAL SOLUTIONS IN THE GA-AL-AS SYSTEM [J].

SMALL, MB ;

GHEZ, R ;

POTEMSKI, RM ;

REUTER, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1177-1182

[8] FORMATION OF GA1-XALX AS LAYERS ON THE SURFACE OF GAAS DURING CONTINUAL DISSOLUTION INTO GA-AL-AS SOLUTIONS [J].

SMALL, MB ;

GHEZ, R ;

POTEMSKI, RM ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :209-210

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