MAGNETORESISTANCE EFFECT IN NEAR INTRINSIC SEMICONDUCTORS - INFLUENCE OF SAMPLE GEOMETRY - NEW METHOD FOR DETERMINATION OF CARRIER DENSITIES AND MOBILITIES

被引：23

作者：

LAKEOU, S ^{[1
]}

CRISTOLOVEANU, S ^{[1
]}

CHOVET, A ^{[1
]}

机构：

[1] ECOLE NORM SUPER ELECTR & RADIOELECTR,INST NATL POLYTECH,ELECTR LAB,CNRS,EQUIPE RECH 659,F-38031 GRENOBLE,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 43卷 / 01期

关键词：

D O I：

10.1002/pssa.2210430122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：213 / 222

页数：10

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