TRANSPORT AND LOCALIZATION IN ND2-XCEXCUO4-Y CRYSTALS AT LOW DOPING

被引:68
作者
HAGEN, SJ [1 ]
XU, XQ [1 ]
JIANG, W [1 ]
PENG, JL [1 ]
LI, ZY [1 ]
GREENE, RL [1 ]
机构
[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 01期
关键词
D O I
10.1103/PhysRevB.45.515
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report in-plane transport properties of Nd2-xCexCuO4-y crystals prepared in low-doped (x approximately 0.01-0.11), nonsuperconducting compositions. The large negative Hall coefficient R(H) and thermopower S in these samples confirm the presence of a small density of n-type carriers. At low T we find a highly anisotropic negative magnetoresistance which, together with the behavior of rho, S, and R(H), demonstrates two-dimensional weak localization of these carriers occurring as Ce content decreases. Analysis of the magnetoresistance data reveals an anomalously weak T dependence of the electron inelastic-scattering rate 1/tau(i).
引用
收藏
页码:515 / 518
页数:4
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