TRANSIENT RESONANCE RAYLEIGH-SCATTERING FROM ELECTRONIC STATES IN DISORDERED-SYSTEMS - EXCITONS IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

被引：71

作者：

STOLZ, H ^{[1
]}

SCHWARZE, D ^{[1
]}

VONDEROSTEN, W ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH, WALTER SCHOTTKY INST, W-8046 GARCHING, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.47.9669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonance Rayleigh scattering from electronic states in materials with static disorder is investigated both theoretically and experimentally. By using classical scattering theory we prove that this process, if excited by short optical pulses, decays with finite time constant determined by the coherence time or, equivalently, the homogeneous linewidth of the state. Experiments with picosecond time resolution at the (n = 1, e-hh) exciton in GaAs/AlxGa1-xAs multiple-quantum-well structures confirm this prediction. Exploiting the selection rules, from transient scattering the coherence time and energy-relaxation time are determined and measured as functions of exciton energy across the inhomogeneously broadened exciton band.

引用

页码：9669 / 9675

页数：7

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