NOISE IN MOS BUCKET-BRIGADE DEVICES

被引：18

作者：

BUSS, DD ^{[1
]}

BAILEY, WH ^{[1
]}

EVERSOLE, WL ^{[1
]}

机构：

[1] TEXAS INSTR INCORP,CENT RES LAB,RES & DEV BRANCH,DALLAS,TX 75222

来源：

关键词：

D O I：

10.1109/T-ED.1975.18256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 981

页数：5

共 10 条

[1] BOONSTRA L, 1972, IEEE INT SOLID STATE, P140
[2] BUSS DD, 1972, JUN DEV RES C EDM AL
[3] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG
[4] NOISE MEASUREMENTS ON FLOATING DIFFUSION INPUT FOR CHARGE-COUPLED-DEVICES
EMMONS, SP
BUSS, DD
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5303 - 5306
[5] EMMONS SP, 1973, SEP P CCD APPL C SAN, P189
[6] THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES
JORDAN, AG
JORDAN, NA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 148 - +
[7] KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505
[8] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 146 - +
[9] NOISE SUPPRESSION IN CHARGE-TRANSFER DEVICES
THORNBER, KK
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1113 - &
[10] QUANTITATIVE EFFECTS OF INTERFACE STATES ON PERFORMANCE OF CHARGE-COUPLED DEVICES
TOMPSETT, MF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) : 45 - 55