MODULATED AND TRANSIENT PHOTOCONDUCTIVITY IN A-AS2 SE3

被引：30

作者：

MAIN, C ^{[1
]}

WEBB, DP ^{[1
]}

BRUGGEMANN, R ^{[1
]}

REYNOLDS, S ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS ELEKTR,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80278-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Modulated photocurrent phase shift measurements (MPC) have been used to probe the valence band tail density of states (DOS) in a-As2Se3. In the absence of obvious structure, use of optical bias to define a 'thermalisation energy limit' allows MPC to be used to determine the attempt-to-escape frequency. Computer modelling of steady state and transient photoconductivity reveals inconsistencies in a charged defect interpretation.

引用

页码：951 / 954

页数：4

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