ION-BEAM-INDUCED CHEMICAL-VAPOR-DEPOSITION FOR THE PREPARATION OF THIN-FILM OXIDES

被引：41

作者：

LEINEN, D ^{[1
]}

FERNANDEZ, A ^{[1
]}

ESPINOS, JP ^{[1
]}

BELDERRAIN, TR ^{[1
]}

GONZALEZELIPE, AR ^{[1
]}

机构：

[1] DEPT QUIM INORGAN,E-41008 SEVILLE,SPAIN

来源：

THIN SOLID FILMS | 1994年 / 241卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90425-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper an ion beam induced chemical vapor deposition procedure is proposed for the preparation of oxide films. The method consists of the bombardment of a substrate with O2+ ions while a flow of a volatile precursor is directed onto it. The possibilities of the method are illustrated by a TiO2 thin film grown on quartz from Ti(CH3CH2O)4 as precursor. The grown film is studied by X-ray photoelectron spectroscopy, scanning and transmission electron microscopies, and UV-visible spectroscopy. The refractive indexes of the films (between 2.3 and 2.7) are similar to those of other TiO2 thin films prepared by ion beam assisted deposition methods.

引用

页码：198 / 201

页数：4

共 11 条

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