TITANIUM-OXIDE FORMATION BY DYNAMIC ION-BEAM MIXING

被引：29

作者：

MIYAKE, S

KOBAYASHI, T

SATOU, M

FUJIMOTO, F

机构：

[1] KOBE STEEL LTD,KAKOGAWA,KAKOGAWA,HYOGO 67501,JAPAN

[2] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

[3] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.577169

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Titanium-oxide films were deposited on Si wafers and/or quartz plates by a dynamic ion beam mixing method. High energy O2+ and/or O+ beams (30-40 keV) were injected during the deposition of Ti vapor onto the samples. Analysis of the film structure revealed the formation of TiO rather than TiO2, and the film growth varied from (111) to (200) plane of TiO with a decrease in the Ti:O arrival rate of Ti atoms and O+ ions onto the sample. Annealing of prepared films at 600-degrees-C in the open air changed the film structure to include TiO2.

引用

页码：3036 / 3040

页数：5

共 22 条

[1] ON THE FORMATION OF BN FILMS BY ION-BEAM AND VAPOR-DEPOSITION [J].