STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS

被引：30

作者：

WILSON, DK

机构：

来源：

关键词：

D O I：

10.1063/1.1753898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：127 / 129

页数：3

共 8 条

[1] GALEENER FL, 1963, PHYS REV LETT, V10, P472
[2] PAIR SPECTRA IN GAP
HOPFIELD, JJ
GERSHENZON
THOMAS, DG
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (05) : 162 - &
[3] THE FORWARD CHARACTERISTIC OF THE PIN DIODE
KLEINMAN, DA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 685 - 706
[4] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
KOHN, W
[J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320
[5] KOHN W, 1957, SOLID STATE PHYSICS, V5
[6] RECOMBINATION RADIATION IN GAAS
NATHAN, MI
BURNS, G
[J]. PHYSICAL REVIEW, 1963, 129 (01): : 125 - &
[7] PANKOVE JI, 1962, B AM PHYS SOC, V7, P88
[8] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243