NONLINEAR MODULATION OF THE CARRIER POPULATION IN A HIGHLY EXCITED SEMICONDUCTOR

被引：8

作者：

CARRILLO, JL

REYES, J

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3172 / 3179

页数：8

共 12 条

[1]

Carrillo J. A., UNPUB

[2] A PHENOMENOLOGICAL MODEL FOR THE LUMINESCENCE OF HOT-ELECTRONS IN THE HIGH-EXCITATION DENSITY REGIME [J].

CARRILLO, JL ;

REYES, J ;

ZEHE, A .

SOLID STATE COMMUNICATIONS, 1983, 45 (08) :655-659

[3] NON-EQUILIBRIUM PHONON SPECTROSCOPY - A NEW TECHNIQUE FOR STUDYING INTERVALLEY SCATTERING IN SEMICONDUCTORS [J].

COLLINS, CL ;

YU, PY .

PHYSICAL REVIEW B, 1983, 27 (04) :2602-2604

[4] THERMALIZATION OF ELECTRON-HOLE PLASMA IN GAAS - CASE OF RESONANT EXCITATION [J].

GOEBEL, EO ;

HILDEBRAND, O .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (02) :645-652

[5]

Hernandez P. H., 1982, Revista Mexicana de Fisica, V28, P553

[6] A THEORETICAL-STUDY OF HOT PHOTO-EXCITED ELECTRONS IN GAAS [J].

MAKSYM, PA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (14) :3127-3140

[7] RADIATIVE RECOMBINATION FROM PHOTOEXCITED HOT CARRIERS IN GAAS [J].

SHAH, J ;

LEITE, RCC .

PHYSICAL REVIEW LETTERS, 1969, 22 (24) :1304-&

[8] INVESTIGATION OF HOT CARRIER RELAXATION WITH PICOSECOND LASER-PULSES [J].

SHAH, J .

JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :445-462

[9] PUMP WAVELENGTH DEPENDENCE OF HOT-ELECTRON TEMPERATURE IN GAAS [J].

SHAH, J ;

LIN, C ;

LEHENY, RF ;

DIGIOVANNI, AE .

SOLID STATE COMMUNICATIONS, 1976, 18 (04) :487-489

[10]

SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2

← 1 2 →