ELECTRICAL-TRANSPORT IN (100)COSI2/SI CONTACTS

被引：26

作者：

LAUWERS, A ^{[1
]}

LARSEN, KK ^{[1
]}

VANHOVE, M ^{[1
]}

VERBEECK, R ^{[1
]}

MAEX, K ^{[1
]}

VANROSSUM, M ^{[1
]}

VERCAEMST, A ^{[1
]}

VANMEIRHAEGHE, R ^{[1
]}

CARDON, F ^{[1
]}

机构：

[1] STATE UNIV GHENT, KRISTALLOG STUDIE VASTE STOF LAB, B-9000 GHENT, BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed investigation of the electrical transport in (100) CoSi 2/Si contacts is presented. The transport properties of epitaxial CoSi2 films, obtained both by ion-beam synthesis and by solid-state reaction of a Ti/Co bimetallic layer, are compared with the transport properties of conventional polycrystalline CoSi2 layers. The electrical resistivity, the magnetoresistance, and the Hall effect are measured on Hall bars for temperatures ranging from 1.2 to 300 K and magnetic fields up to 5 T. Very high values of the order parameter kFL0 are observed, indicating that the investigated samples are of very high purity and crystalline order. In addition, the electric transport at the CoSi 2/Si interface is studied by current-voltage and capacitance-voltage measurements on Schottky diode structures for temperatures ranging from 173 to 333 K. Ideality factors close to unity are observed for the highest temperatures, for the lower temperatures the ideality factors are found to increase with decreasing temperatures. The observed temperature dependence of the ideality factor and the Schottky barrier height can be attributed to Schottky barrier inhomogeneities. © 1995 American Institute of Physics.

引用

页码：2525 / 2536

页数：12

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