THIN-FILM ELECTROLUMINESCENT DEVICES - INFLUENCE OF MN-DOPING METHOD AND DEGRADATION PHENOMENA

被引：8

作者：

MENN, R

TUETA, RJ

IZRAEL, A

BRAGUIER, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 05期

关键词：

D O I：

10.1109/T-ED.1983.21147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：460 / 463

页数：4

共 13 条

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[2]

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KUN, ZK ;

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[4]

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[5] DEVICE CHARACTERIZATION OF AN ELECTRON-BEAM-SWITCHED THIN-FILM ZNS-MN ELECTROLUMINESCENT FACEPLATE [J].

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ALT, PM ;

DOVE, DB ;

HOWARD, WE ;

MCCLURE, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) :708-719

[6] THE DEPENDENCES OF ELECTROLUMINESCENT CHARACTERISTICS OF ZNS-MN THIN-FILMS UPON THEIR DEVICE PARAMETERS [J].

SASAKURA, H ;

KOBAYASHI, H ;

TANAKA, S ;

MITA, J ;

TANAKA, T ;

NAKAYAMA, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6901-6906

[7]

SUNTOLA T, 1981, 1981 SID INT S NEW Y, V12, P20

[8]

TANNAS LE, 1981, 1981 SID INT S, V12, P22

[9]

THEIS D, 1981, SEP P EUR 81 MUN, P152

[10]

THEIS D, 1980, SIEMENS FORSCH ENTWI, V9, P357

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