TRANSIENT PHOSPHORUS DIFFUSION FROM SILICON AND ARGON IMPLANTATION DAMAGE

被引：35

作者：

GILES, MD

机构：

[1] University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for phosphorus and show the importance of bulk recombination in determining defect distributions for argon damage annealing.

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页码：1940 / 1942

页数：3

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