(310)-FACETING OF THE GE(001)2X1 SURFACE-INDUCED BY INDIUM

被引：31

作者：

GAI, Z ^{[1
]}

JI, H ^{[1
]}

HE, Y ^{[1
]}

HU, C ^{[1
]}

ZHAO, RG ^{[1
]}

YANG, WS ^{[1
]}

机构：

[1] BEIJING UNIV,DEPT PHYS,MESOSCOP PHYS LAB,BEIJING 100871,PEOPLES R CHINA

来源：

SURFACE SCIENCE | 1995年 / 338卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

GERMANIUM; INDIUM; LOW ENERGY ELECTRON DIFFRACTION (LEED); SCANNING TUNNELING MICROSCOPY; SURFACE RELAXATION AND RECONSTRUCTION;

D O I：

10.1016/0039-6028(95)00661-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 X 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.

引用

页码：L851 / L856

页数：6

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