THEORY FOR NON-EQUILIBRIUM BEHAVIOR OF ANISOTYPE GRADED HETEROJUNCTIONS

被引:11
作者
CHATTERJEE, A [1 ]
MARSHAK, AH [1 ]
机构
[1] LOUISIANA STATE UNIV,DEPT ELECT & COMP ENGN,BATON ROUGE,LA 70803
关键词
D O I
10.1016/0038-1101(83)90161-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:59 / 64
页数:6
相关论文
共 29 条
[1]  
ALFEROV ZI, 1968, SOV PHYS SEMICOND+, V1, P1313
[2]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[3]   THE EFFECT OF POSITION-DEPENDENT DIELECTRIC-CONSTANT ON THE ELECTRIC-FIELD AND CHARGE-DENSITY IN A P-N-JUNCTION [J].
ANDREWS, MH ;
MARSHAK, AH ;
SHRIVASTAVA, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6783-6787
[4]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[5]  
CHATTERJEE A, 1981, SOLID ST ELECTRON, V24, P111
[6]  
CULSHAW B, 1978, AVALANCHE DIODE OSCI
[7]   CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J].
DONNELLY, JP ;
MILNES, AG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :63-+
[8]   DERIVATION OF CURRENT-VOLTAGE CHARACTERISTICS FOR GRADED HETEROJUNCTIONS [J].
HALL, WF .
ELECTRONICS LETTERS, 1973, 9 (23) :548-549
[9]   THEORETICAL-ANALYSIS OF ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL [J].
HUTCHBY, JA ;
FUDURICH, RL .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3140-3151
[10]  
IMENKOV AN, 1976, SOV PHYS SEMICOND+, V10, P748