ADSORPTION OF LI, CS, AND O ON CDTE

被引:11
作者
GORDON, J
MORGEN, P
SHECHTER, H
FOLMAN, M
机构
[1] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL
[2] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL
[3] TECHNION ISRAEL INST TECHNOL, DEPT CHEM, IL-32000 HAIFA, ISRAEL
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 03期
关键词
D O I
10.1103/PhysRevB.52.1852
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The adsorption of Li and Cs on CdTe(100) single crystals was investigated using different surface sensitive electron spectroscopies. Low-energy electron diffraction shows a number of surface reconstructions of the clean surfaces, influenced by the Cd/Te ratio. Deposition of Li shows a constant sticking probability, while Cs has a variable sticking probability, characteristic of island growth coalescing at a coverage of a monolayer. Li and Cs both form amorphous monoatomic layers. Large work-function changes of the CdTe surface as a function of Li and of Cs coverage were found at the initial stages of adsorption, indicating that Cs and Li atoms are to a large extent ionized on the surface (100) plane. The initial dipole moments for Cs and for Li were calculated with the Helmholtz equation mu(Cs,theta-->0)approximate to 26 D and mu(Li,theta-->0)approximate to 3.2 D and using Topping plots mu(0,Cs)=127.2 D and mu(0,Li)=4.22 D. Adsorption of oxygen on the cesium-covered surface raises the work function by Delta phi=0.5+/-0.05 eV. Reflection-electron energy-loss spectra of the cesiated CdTe(100) surface at E(p)=100 eV, recorded at a low temperature (96 K), show a characteristic Cs two-dimensional surface plasmon, HBAR omega(s) at 2.05 eV, which disappears with rising temperature. During Cs growth a loss is observed at 26.6 eV which is assigned to Cs 5s core-level transitions.
引用
收藏
页码:1852 / 1858
页数:7
相关论文
共 33 条
[1]   CDTE-HGTE HETEROSTRUCTURES [J].
ALMASI, GS ;
SMITH, AC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) :233-&
[2]   ADSORPTION OF LITHIUM AND OXYGEN ON GALLIUM-ARSENIDE [J].
ARGILE, C ;
RHEAD, GE .
THIN SOLID FILMS, 1987, 152 (03) :545-552
[3]  
BELL RL, 1973, NEGATIVE ELECTRON AF
[4]   WORK FUNCTION AND LEED STUDY OF NA AND O2 COVERED SURFACES OF W(112) [J].
CHEN, JM ;
PAPAGEORGOPOULOS, CA .
SURFACE SCIENCE, 1971, 26 (02) :499-+
[5]   PHOTO-VOLTAIC PROPERTIES OF CDTE P-N-JUNCTIONS PRODUCED BY ION-IMPLANTATION [J].
CHU, M ;
FAHRENBRUCH, AL ;
BUBE, RH ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :322-326
[6]   INTERACTION OF CESIUM WITH CLEAVED GAAS(110) AND GE(111) SURFACES - WORK FUNCTION MEASUREMENTS AND ADSORPTION SITE MODEL [J].
CLEMENS, HJ ;
WIENSKOWSKI, JV ;
MONCH, W .
SURFACE SCIENCE, 1978, 78 (03) :648-666
[7]   ISOBAR, LOW-ENERGY ELECTRON-DIFFRACTION AND LOSS SPECTROSCOPY MEASUREMENTS OF CESIUM COVERED (110) GALLIUM-ARSENIDE [J].
DERRIEN, J ;
DAVITAYA, FA ;
BIENFAIT, M .
SOLID STATE COMMUNICATIONS, 1976, 20 (06) :557-560
[8]   ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J].
DERRIEN, J ;
ARNAUDDAVITAYA, F .
SURFACE SCIENCE, 1977, 65 (02) :668-686
[9]   INTERACTION OF CESIUM AND OXYGEN ON W(110) .1. CESIUM ADSORPTION ON OXYGENATED AND OXIDIZED W(110) [J].
DESPLAT, JL ;
PAPAGEORGOPOULOS, CA .
SURFACE SCIENCE, 1980, 92 (01) :97-118
[10]  
EBINA A, 1980, PHYS REV B, V22, P1980, DOI 10.1103/PhysRevB.22.1980