IV-VI QUANTUM-WELLS FOR INFRARED-LASERS

被引：35

作者：

BAUER, G

KRIECHBAUM, M

SHI, Z

TACKE, M

机构：

[1] GRAZ UNIV,INST THEORET PHYS,A-8010 GRAZ,AUSTRIA

[2] FRAUNHOFER INST PHYS MESSTECH,D-79110 FREIBURG,GERMANY

来源：

JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS | 1995年 / 4卷 / 02期

关键词：

D O I：

10.1142/S0218863595000124

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Of central importance for mid-infrared diode lasers are their actual cryogenic operation temperatures. Quantum structures offer the potential for threshold current reduction and hence an operation temperature increase. The present experimental state of quantum structure diode lasers is reviewed. The relevant laser properties of the most promising material system, the IV-VI's are treated theoretically, and experimental results for IV-VI quantum well and superlattices samples are discussed.

引用

页码：283 / 312

页数：30

共 55 条

[1] GROWTH AND CHARACTERIZATION OF PB1-XCAXS THIN-FILMS PREPARED BY HOT-WALL EPITAXY METHOD [J].