APPLICATION OF SPECTRUM SYNTHESIS METHOD TO DEPTH PROFILE ANALYSIS

A spectrum synthesis method based on non-linear least-squares fitting has been applied to the depth analysis of the SiO2 thin layer on Si. The present treatment was required because the Auger spectra overlapped between the oxide and the metal species both in Si LVVand in Si KLL regions, and the Auger peak energies shifted to the higher energy side with a decrease in the thickness of the oxide layer. The calculation with appropriate constraining conditions yielded the detailed depth profiles which could distinguish the two chemically different species. A non-uniform distribution in the depth of metal species was observed by the profiles derived from LVV and KLL peaks because of the difference in their electron escape depths. © 1990.