GENERALIZED THEORY OF IMPACT IONIZATION IN MULTILAYERED SEMICONDUCTOR STRUCTURES

被引：5

作者：

BRENNAN, K

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90462-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：514 / 518

页数：5

共 14 条

[1] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS [J].

BLACHA, A ;

PRESTING, H ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01) :11-36

[2] THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS [J].

BRENNAN, K ;

WANG, T ;

HESS, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :199-201

[3] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[5] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J].

CAPASSO, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1388-1395

[6] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[7] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

PHYSICAL REVIEW B, 1976, 13 (12) :5347-5350

[8]

Hess K, COMMUNICATION

[9] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[10]

JUANG FY, 1985, 43RD DEV RES C BOULD

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