JOSEPHSON TUNNELING AND GAP STRUCTURE IN Y1BA2CU3O7-Y OXIDE BARRIER PB PLANAR JUNCTIONS ON TETRAGONAL LASRGAO4 (100) SUBSTRATES

被引:8
作者
WEN, Z [1 ]
IGUCHI, I [1 ]
NAKAMURA, K [1 ]
机构
[1] KOMATSU LTD,MAT LAB,HIRATSUKA,KANAGAWA 254,JAPAN
关键词
D O I
10.1063/1.347597
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Y1Ba2Cu3O7-y/oxide barrier/Pb thin film tunnel junctions are fabricated on the (100) plane of new tetragonal LaSrGaO4 single-crystal substrates by an in situ electron-beam deposition technique. Reproducible Josephson behavior is observed for all fabricated junctions. Above a Josephson critical current, a premature switching voltage of about 1 mV appears. The I-V curve under an applied magnetic field exhibits low-leakage quasiparticle tunneling characteristic. Modulation of Josephson critical current by the applied magnetic field yields a reversible Fraunhofer-like pattern against flux direction.
引用
收藏
页码:7363 / 7365
页数:3
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