VAPOR-PHASE EPITAXIAL-GROWTH OF NITROGEN-DOPED IN1-XGAXP ALLOYS

被引：4

作者：

OHKI, Y ^{[1
]}

ASAO, I ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,IKUTA,TAMA,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90312-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：244 / 248

页数：5

共 15 条

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[7] VAPOR-PHASE GROWTH OF GAXIN1-XP EPITAXIAL LAYERS [J].

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FAIRHURST, KM .

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[8] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J].

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[9] CATHODOLUMINESCENCE OF GAXIN1-XP ALLOYS [J].

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[10]

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