DEEP STATES DISTRIBUTION IN UNDOPED AMORPHOUS-SILICON STUDIED BY CURRENT TRANSIENT SPECTROSCOPY

被引：3

作者：

KIDA, H

HATTORI, K

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] Osaka Univ, Toyonaka, Jpn, Osaka Univ, Toyonaka, Jpn

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90671-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SEMICONDUCTING SILICON COMPOUNDS

引用

页码：343 / 346

页数：4

共 8 条

[1] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].

COHEN, JD ;

HARBISON, JP ;

WECHT, KW .

PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112

[2] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J].

JOHNSON, NM ;

BIEGELSEN, DK .

PHYSICAL REVIEW B, 1985, 31 (06) :4066-4069

[3]

KIDA H, UNPUB J APPL PHYS

[4]

OKAMOTO H, PHIL MAG B

[5] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01) :33-57

[6] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J].

SIMMONS, JG ;

TAM, MC .

PHYSICAL REVIEW B, 1973, 7 (08) :3706-3713

[7] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J].

SPEAR, WE ;

STEEMERS, HL ;

LECOMBER, PG ;

GIBSON, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :L33-L40

[8] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON [J].

WRONSKI, CR ;

ABELES, B ;

TIEDJE, T ;

CODY, GD .

SOLID STATE COMMUNICATIONS, 1982, 44 (10) :1423-1426

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