HIGH-POWER SEMICONDUCTOR-LASER INJECTION-LOCKING AT 1.3 MU-M

We have investigated the injection-locking properties of a high power anti-reflection coated 1.3-mu-m slave laser subjected to relatively low injection powers from a DFB laser and a tunable external cavity laser, respectively. Narrow linewidth operation (approximately 40 kHz) was demonstrated and the tuning range within two slave modes (approximately 10 GHz) and over the gain profile (approximately 40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300-mu-W was injected into the slave.