DECAY DYNAMICS OF THE HOMOGENEOUSLY BROADENED PHOTOLUMINESCENCE FROM POROUS SILICON

被引:32
作者
KOYAMA, H
OZAKI, T
KOSHIDA, N
机构
[1] Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei
关键词
D O I
10.1103/PhysRevB.52.R11561
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dynamic properties of visible photoluminescence (PL) from porous silicon (PS) has been studied for PS samples prepared such that the PL spectra exhibit no significant inhomogeneous broadening. Even though both the excitation-wavelength dependence of PL spectra and the emission-wavelength dependence of PL excitation spectra are completely suppressed, the PL decay curves are nonexponential and the decay times still strongly depend on the emission wavelength. This implies that any structural inhomogeneity, such as a fluctuation in the Si cystallite size, is not directly responsible for the characteristic decay features of this material. A model is presented in which localized electron-hole pairs with various localization energies and pair distances in Si nanocrystallites couple with lattice phonons, resulting in the mixing of respective emission spectra.
引用
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页码:11561 / 11564
页数:4
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共 37 条
  • [1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
    BRANDT, MS
    FUCHS, HD
    STUTZMANN, M
    WEBER, J
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
  • [2] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS
    BSIESY, A
    VIAL, JC
    GASPARD, F
    HERINO, R
    LIGEON, M
    MULLER, F
    ROMESTAIN, R
    WASIELA, A
    HALIMAOUI, A
    BOMCHIL, G
    [J]. SURFACE SCIENCE, 1991, 254 (1-3) : 195 - 200
  • [3] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON
    CALCOTT, PDJ
    NASH, KJ
    CANHAM, LT
    KANE, MJ
    BRUMHEAD, D
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : L91 - L98
  • [4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [5] LUMINESCENCE AND PHOTOPHYSICS OF CDS SEMICONDUCTOR CLUSTERS - THE NATURE OF THE EMITTING ELECTRONIC STATE
    CHESTNOY, N
    HARRIS, TD
    HULL, R
    BRUS, LE
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (15) : 3393 - 3399
  • [6] MICROSTRUCTURE OF VISIBLY LUMINESCENT POROUS SILICON
    COLE, MW
    HARVEY, JF
    LUX, RA
    ECKART, DW
    TSU, R
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2800 - 2802
  • [7] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
    CULLIS, AG
    CANHAM, LT
    [J]. NATURE, 1991, 353 (6342) : 335 - 338
  • [8] EVOLUTION OF VISIBLE PHOTOLUMINESCENCE AND SURFACE-MORPHOLOGY OF ULTRATHIN POROUS SI FILMS IMAGED BY SCANNING-TUNNELING-MICROSCOPY
    ENACHESCU, M
    HARTMANN, E
    KOCH, F
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2074 - 20777
  • [9] MECHANISM OF BROAD-BAND LUMINESCENCES IN ZNS PHOSPHORS .I. SPECTRUM SHIFT DURING DECAY AND WITH EXCITATION INTENSITY
    ERA, K
    SHIONOYA, S
    WASHIZAW.Y
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) : 1827 - &
  • [10] MECHANISM OF BROAD-BAND LUMINESCENCES IN ZNS PHOSPHORS .2. CHARACTERISTICS OF PAIR EMISSION TYPE LUMINESCENCES
    ERA, K
    SHIONOYA.S
    WASHIZAW.Y
    OHMATSU, H
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) : 1843 - &