ELECTRICAL BEHAVIOR OF BAM-4+O-3(M-4+ - MN, CO, NI) UNDER VERY HIGH-PRESSURES

被引：1

作者：

SHIMADA, M

KANAMARU, F

KOIZUMI, M

TAKEDA, Y

ONODERA, A

机构：

[1] OSAKA UNIV,INST SCI & IND RES,OSAKA,JAPAN

[2] NAGOYA UNIV,FAC ENGN,SYNTH CRYSTAL RES LAB,NAGOYA,JAPAN

[3] OSAKA UNIV,FAC ENGN SCI,DEPT PHYS,OSAKA,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 11-1期

关键词：

D O I：

10.1016/0038-1098(76)90393-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1561 / 1563

页数：3

共 12 条

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[9] SEMICONDUCTOR-TO-METAL TRANSITION IN GAP UNDER HIGH-PRESSURE [J].

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[10] GROWTH OF SINGLE-CRYSTALS OF BAFE4+O3(12L), BANI4+O3(2L) AND BACO4+O3(2L) UNDER HIGH OXYGEN-PRESSURE [J].

SHIMADA, M ;

TAKEDA, Y ;

TAGUCHI, H ;

KANAMARU, F ;

KOIZUMI, M .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :75-76

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