HOLE HALL-MOBILITY ENHANCEMENT IN HGTE-HG1-XCDXTE HETEROJUNCTIONS

被引:11
作者
FAURIE, JP
SOU, IK
WIJEWARNASURIYA, PS
RAFOL, S
WOO, KC
机构
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 08期
关键词
D O I
10.1103/PhysRevB.34.6000
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6000 / 6002
页数:3
相关论文
共 12 条
[1]   QUANTUM WELL BOUND-STATES OF HGTE IN CDTE [J].
CADE, NA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (26) :5135-5141
[2]   EFFECTS OF QUASI-INTERFACE STATES IN HGTE-CDTE SUPERLATTICES [J].
CHANG, YC ;
SCHULMAN, JN ;
BASTARD, G ;
GULDNER, Y ;
VOOS, M .
PHYSICAL REVIEW B, 1985, 31 (04) :2557-2560
[3]  
CHEUNG JT, UNPUB J VAC SCI TECH
[4]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[5]   HGTE/CDTE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
BOUKERCHE, M ;
SIVANANTHAN, S ;
RENO, J ;
HSU, C .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) :237-244
[6]   GROWTH AND PROPERTIES OF HGTE-CDTE AND OTHER HG-BASED SUPERLATTICES [J].
FAURIE, JP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1656-1665
[7]  
HJALMARSON HP, UNPUB, P94108
[8]   POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY [J].
HSU, C ;
SIVANANTHAN, S ;
CHU, X ;
FAURIE, JP .
APPLIED PHYSICS LETTERS, 1986, 48 (14) :908-910
[9]   INTERFACE STATES AND SUBBANDS IN HGTE-CDTE HETEROSTRUCTURES [J].
LINLIU, YR ;
SHAM, LJ .
PHYSICAL REVIEW B, 1985, 32 (08) :5561-5563
[10]  
PRANGE RE, 1986, QUANTIZED HALL EFFEC