HIGH-POWER 780 NM WINDOW DIFFUSION STRIPE LASER-DIODES FABRICATED BY AN OPEN-TUBE 2-STEP DIFFUSION TECHNIQUE

High-power and low-threshold-current GaAlAs lasers with a simple window structure have been fabricated by controllable open-tube two-step diffusion and single-step metalorganic chemical vapor deposition. The window structure and the waveguide with a sufficient narrow width around 2 urn are formed by diffusion of zinc, which just passes through an n-type active layer. CW output power up to 134 mW without catastrophic damage and a threshold current of 17.5 mA have been achieved. A maximum output power density of 16 MW/cm2 has been estimated. A stable fundamental transverse mode has been obtained up to 100 mW in the wavelength range of 780 nm. Excellent uniformity of device characteristics has also been confirmed. © 1990 IEEE