ELECTRICAL-PROPERTIES OF DISLOCATION LINES IN SILICON

被引：6

作者：

JAROS, M

KIRTON, MJ

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 46卷 / 01期

关键词：

D O I：

10.1080/13642818208246425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：85 / 88

页数：4

共 5 条

[1] JONES R, 1979, J PHYSIQUE C C, V6, P33
[2] THE NATURE OF DANGLING BONDS AT LINE DEFECTS IN COVALENT SEMICONDUCTORS
KIRTON, MJ
JAROS, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (15): : 2099 - 2115
[3] ENERGY-BAND ASSOCIATED WITH DANGLING BONDS IN SILICON
MANTOVANI, S
DELPENNINO, U
VALERI, S
[J]. PHYSICAL REVIEW B, 1980, 22 (04): : 1926 - 1932
[4] PATEL JR, 1979, J PHYS C SOLID STATE, V6, P67
[5] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SI (111) SURFACES - UNRECONSTRUCTED (1X1) AND RECONSTRUCTED (2X1) MODEL STRUCTURES
SCHLUTER, M
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4200 - 4214