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FORWARD TRANSIENT BEHAVIOR OF P-N JUNCTION DIODES AT HIGH INJECTION LEVELS

被引：5
作者：
KANO, K
REICH, HJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1964年 / ED11卷 / 11期
关键词：
D O I：
10.1109/T-ED.1964.15374
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：515 / &
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