OHMIC CONTACT AND IMPURITY CONDUCTION IN P-DOPED CDTE

被引：42

作者：

GU, J ^{[1
]}

KITAHARA, T ^{[1
]}

KAWAKAMI, K ^{[1
]}

SAKAGUCHI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECT ENGN,KYOTO,JAPAN

来源：

关键词：

D O I：

10.1063/1.322220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1184 / 1185

页数：2

共 8 条

[1] SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE [J].

CROWDER, BL ;

HAMMER, WN .

PHYSICAL REVIEW, 1966, 150 (02) :541-&

[2]

ISHIDA H, 1971, 3 P C SOL STAT DEV T, P117

[3] PERIPHERAL INHOMOGENETIES OF THE ALLOYED GERMANIUM P-N JUNCTION [J].

KIKUCHI, M .

[4] SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J].

LORENZ, MR ;

SEGALL, B .

PHYSICS LETTERS, 1963, 7 (01) :18-20

[5]

MANY A, 1965, SEMICONDUCTOR SURFAC, P371

[6] SHALLOW-P ACCEPTOR LEVELS IN CDTE AND ZNTE [J].

MOREHEAD, FF ;

MANDEL, G .

PHYSICS LETTERS, 1964, 10 (01) :5-6

[7]

NOBEL DD, 1959, PHILIPS RES REP, V14, P361

YAMADA, S .