PREPARATION OF EPITAXIAL PBTIO3 THIN-FILMS BY METALORGANIC VAPOR-PHASE EPITAXY UNDER REDUCED PRESSURE

被引:25
作者
CHEN, YF [1 ]
CHEN, JX [1 ]
SHUN, L [1 ]
YU, T [1 ]
LI, P [1 ]
MING, NB [1 ]
SHI, LJ [1 ]
机构
[1] NANJING UNIV TECHNOL,DEPT MAT SCI & TECHNOL,NANJING 210010,PEOPLES R CHINA
关键词
D O I
10.1016/0022-0248(94)00555-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this study PbTiO3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Ph precursors, and O-2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO3 thin film were investigated. The epitaxial PbTiO3 thin films were grown on (001) SrTiO3 substrates at a growth temperature of 650 degrees C and a growth pressure of 15 Torr. The deposited films were examined using electron microprobe analysis, scanning electron microscopy and X-ray diffraction techniques which included the Laue method. The epitaxial nature of the grown PbTiO3 thin films was established.
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收藏
页码:624 / 629
页数:6
相关论文
共 11 条
[1]  
Budd K. D., 1985, British Ceramic Proceedings, P107
[2]  
CHERN CS, 1992, APPL PHYS LETT, V50, P1144
[3]   EPITAXIAL PBTIO3 THIN-FILMS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
DEKEIJSER, M ;
DORMANS, GJM ;
CILLESSEN, JFM ;
DELEEUW, DM ;
ZANDBERGEN, HW .
APPLIED PHYSICS LETTERS, 1991, 58 (23) :2636-2638
[4]  
Kushida K., 1985, Japanese Journal of Applied Physics, Supplement, V24, P407
[5]   PREPARATION OF C-AXIS-ORIENTED PBTIO3 THIN-FILMS BY MOCVD UNDER REDUCED PRESSURE [J].
OKADA, M ;
TAKAI, S ;
AMEMIYA, M ;
TOMINAGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06) :1030-1034
[6]   METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED PZT THIN-FILMS [J].
OKADA, M ;
TOMINAGA, K ;
ARAKI, T ;
KATAYAMA, S ;
SAKASHITA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04) :718-722
[7]  
Stringfellow G. B., 1989, ORGANOMETALLIC VAPOR
[8]   CHARACTERIZATION OF MOCVD PBTIO3 THIN-FILMS [J].
SWARTZ, SL ;
SEIFERT, DA ;
NOEL, GT ;
SHROUT, TR .
FERROELECTRICS, 1989, 93 :37-43
[9]  
TOMITA KY, 1986, J APPL PHYS, V60, P361
[10]  
YANG CZ, 1983, CHINESE J SEMICOND, V4, P160