13GB/S D-TYPE FLIP-FLOP IC USING GAAS-MESFETS

被引：12

作者：

OHHATA, M ^{[1
]}

YAMANE, Y ^{[1
]}

ENOKI, T ^{[1
]}

SUGITANI, S ^{[1
]}

KATO, N ^{[1
]}

HAGIMOTO, K ^{[1
]}

HIRAYAMA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, YOKOSUKA ELECT COMMUN LABS, TRANSMISS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Gallium arsenide; Integrated circuits; Memories;

D O I：

10.1049/el:19900674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs monolithic master-slave D-type flip-flop (D-FF) IC has been developed for ultrahigh-speed optical transmission systems. The IC was designed using LSCFL (low-power source coupled FET logic) and realised by 015/mi gate-length MESFETs with a cut-off frequency of 65 GHz. The maximum operating speed was 13Gb/s. This is the fastest speed ever reported for a D-FF. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1039 / 1041

页数：3

共 6 条

[1] 0.15-MU-M GAAS-MESFETS APPLIED TO ULTRAHIGH-SPEED STATIC FREQUENCY-DIVIDERS
ENOKI, T
SUGITANI, S
YAMANE, Y
[J]. ELECTRONICS LETTERS, 1989, 25 (08) : 512 - 513
[2] HAGIMOTO K, 1989, IOOC89
[3] 8 GBIT/S GAAS LOGIC ICS FOR OPTICAL FIBER COMMUNICATION-SYSTEMS
HAMANO, H
AMEMIYA, I
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ONODERA, T
SHIMIZU, S
[J]. ELECTRONICS LETTERS, 1988, 24 (24) : 1522 - 1523
[4] Ohhata M., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P23, DOI 10.1109/GAAS.1988.11015
[5] Shikata M., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P27, DOI 10.1109/GAAS.1988.11016
[6] A 2 GB/S THROUGHPUT GAAS DIGITAL TIME SWITCH LSI USING LSCFL
TAKADA, T
SHIMAZU, Y
YAMASAKI, K
TOGASHI, M
HOSHIKAWA, K
IDDA, M
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) : 1579 - 1584

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