0.15-MU-M GAAS-MESFETS APPLIED TO ULTRAHIGH-SPEED STATIC FREQUENCY-DIVIDERS

[1] ULTRA-HIGH-SPEED DIGITAL CIRCUIT PERFORMANCE IN 0.2-MU-M GATE-LENGTH ALINAS/GAINAS HEMT TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 482 - 484

[2] Shikata M., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P27, DOI 10.1109/GAAS.1988.11016

[3] CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 806 - 808

[4] A 2 GB/S THROUGHPUT GAAS DIGITAL TIME SWITCH LSI USING LSCFL [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) : 1579 - 1584

[5] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121

[6] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425

[1] ULTRA-HIGH-SPEED DIGITAL CIRCUIT PERFORMANCE IN 0.2-MU-M GATE-LENGTH ALINAS/GAINAS HEMT TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 482 - 484

[2] Shikata M., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P27, DOI 10.1109/GAAS.1988.11016

[3] CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 806 - 808

[4] A 2 GB/S THROUGHPUT GAAS DIGITAL TIME SWITCH LSI USING LSCFL [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) : 1579 - 1584

[5] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121

[6] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425