ION-IMPLANTATION IN IV-VI SEMICONDUCTORS

被引：51

作者：

PALMETSHOFER, L

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 03期

关键词：

D O I：

10.1007/BF00616910

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 153

页数：15

共 85 条

[1]

Allgaier R. S., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V285, P2

[2] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].

ALLGAIER, RS ;

SCANLON, WW .

PHYSICAL REVIEW, 1958, 111 (04) :1029-1037

[3]

[Anonymous], 1974, SOLID STATE PHYS

[4]

[Anonymous], 1970, MONOGRAPHS SEMICONDU

[5] LASER ANNEALING OF INDIUM-IMPLANTED PB0.8SN0.2TE FILMS [J].

BAHIR, G ;

BERNSTEIN, T ;

KALISH, R .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :486-488

[6] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].

BAHIR, G ;

KALISH, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140

[7] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J].

BAHIR, G ;

BERNSTEIN, T ;

KALISH, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :247-252

[8] IMPURITY AND VACANCY STATES IN PBTE [J].

BAUER, G ;

BURKHARD, H ;

HEINRICH, H ;

LOPEZOTERO, A .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1721-1723

[9] ION-IMPLANTATION OF PB0.8SN0.2TE [J].

BIS, RF ;

HOUSTON, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1546-1548

[10] ANALYSIS OF SOLIDUS LINES FOR PBTE AND SNTE [J].

BREBRICK, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) :659-692

← 1 2 3 4 5 6 7 8 9 →