ION-IMPLANTATION OF PB0.8SN0.2TE

被引：2

作者：

BIS, RF ^{[1
]}

HOUSTON, B ^{[1
]}

机构：

[1] USN,CTR SURFACE WEAP,SILVER SPRING,MD 20910

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1546 / 1548

页数：3

共 10 条

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[6] P-N-JUNCTION FORMATION BY TE+ ION-IMPLANTATION INTO SOLUTION-GROWN PB1-XSNXTE [J].

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[7] OPTICAL DIELECTRIC-CONSTANT OF PB-1-XSN-XTE IN NARROW-GAP REGION [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1771-1774

[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

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[9]

SIMMONS DG, 1975, PHYS REV A, V12, P2383

[10]

Strauss A. J., 1973, Journal of Electronic Materials, V2, P553, DOI 10.1007/BF02655875

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