P-N-JUNCTION FORMATION BY TE+ ION-IMPLANTATION INTO SOLUTION-GROWN PB1-XSNXTE

被引:11
作者
KATO, Y [1 ]
KATAYAMA, Y [1 ]
KOBAYASHI, KLI [1 ]
KOMATSUBARA, KF [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
关键词
D O I
10.1063/1.321418
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:4614 / 4615
页数:2
相关论文
共 3 条
[1]   PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J].
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CALAWA, AR ;
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LINDLEY, WT ;
HARMAN, TC .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :403-&
[2]   P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].
DONNELLY, JP ;
LINDLEY, WT ;
FOYT, AG ;
HARMAN, TC .
APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&
[3]   N-P JUNCTION IR DETECTORS MADE BY PROTON BOMBARDMENT OF EPITAXIAL PBTE [J].
LOGOTHETIS, EM ;
VARGA, AJ ;
JOHNSON, WJ ;
HOLLOWAY, H .
APPLIED PHYSICS LETTERS, 1972, 21 (09) :411-+