N-P JUNCTION IR DETECTORS MADE BY PROTON BOMBARDMENT OF EPITAXIAL PBTE

被引：12

作者：

LOGOTHETIS, EM

VARGA, AJ

JOHNSON, WJ

HOLLOWAY, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 09期

关键词：

D O I：

10.1063/1.1654434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：411 / +

页数：1

共 9 条

[1] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

DONNELLY, JP ;

HARMAN, TC ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&

[2] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :335-&

[3] HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING [J].

HOLLOWAY, H ;

LOGOTHEI.EM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4522-&

[4] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[5] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES [J].

HOLLOWAY, H ;

YEUNG, KF ;

VARGA, AJ ;

WEBER, WH ;

LOGOTHETIS, EM .

APPLIED PHYSICS LETTERS, 1972, 21 (01) :5-+

[6] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

HOLLOWAY, H ;

VARGA, AJ ;

WILKES, E .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :318-+

[7] LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE [J].

NILL, KW ;

CALAWA, AR ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1970, 16 (10) :375-&

[8]

SCHOOLAR RB, PRIVATE COMMUNICATIO

[9] EFFECT OF PROTON BOMBARDMENT ON PB0.76SN0.24TE [J].

TAO, TF ;

SUNIER, JW ;

WANG, CC .

APPLIED PHYSICS LETTERS, 1972, 20 (07) :235-&

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