INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES

被引：22

作者：

HOLLOWAY, H

YEUNG, KF

VARGA, AJ

WEBER, WH

LOGOTHETIS, EM

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 01期

关键词：

D O I：

10.1063/1.1654213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5 / +

页数：1

共 10 条

[1]

ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, pCH2

[2] PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E ) [J].

BUTLER, JF ;

REDIKER, RH ;

CALAWA, AR ;

HARMAN, TC ;

PHELAN, RJ ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1964, 5 (04) :75-&

[3]

HARMAN TC, 1971, PHYSICS SEMIMETALS N, P363

[4] HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING [J].

HOLLOWAY, H ;

LOGOTHEI.EM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4522-&

[5] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[6] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[7] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

HOLLOWAY, H ;

VARGA, AJ ;

WILKES, E .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :318-+

[8] LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE [J].

NILL, KW ;

CALAWA, AR ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1970, 16 (10) :375-&

[9]

WASHWELL ER, 1964, RADIATIVE RECOMBINAT, P11

[10] ELECTRICAL AND OPTICAL PROPERTIES OF EPITAXIAL FILMS OF PBS PBSE PBTE AND SNTE [J].

ZEMEL, JN ;

JENSEN, JD ;

SCHOOLAR, RB .

PHYSICAL REVIEW, 1965, 140 (1A) :A330-&

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