THE NITRIDATION OF THICK GERMANIUM OXIDE-FILMS ON SINGLE-CRYSTAL GERMANIUM

被引：11

作者：

CRISMAN, EE

GREGORY, OJ

STILES, PJ

机构：

[1] UNIV RHODE ISL,DEPT CHEM ENGN,KINGSTON,RI 02881

[2] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115986

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1896 / 1900

页数：5

共 19 条

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[2]

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[3] THE OXIDATION OF GERMANIUM SURFACES AT PRESSURES MUCH GREATER THAN ONE ATMOSPHERE [J].

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ERCIL, YM ;

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STILES, PJ .

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[4]

DALGLEISH BJ, 1981, SPECIAL CERAMICS, V7, P85

[5]

DALGLEISH BJ, 1980, SCI CERAM, V10, P369

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HUA, Q ;

ROSENBERG, J ;

YE, J ;

YANG, ES .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8969-8973

[7] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

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[8]

JOHNSON WC, 1934, J AM CHEM SOC, V156, P2395

[9] INFRARED STUDIES ON POLYMORPHS OF SILICON DIOXIDE AND GERMANIUM DIOXIDE [J].

LIPPINCOTT, ER ;

VANVALKENBURG, A ;

WEIR, CE ;

BUNTING, EN .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1958, 61 (01) :61-70

[10] INFRARED CHARACTERIZATION OF ALPHA-CRYSTALLINE AND BETA-CRYSTALLINE SILICON-NITRIDE [J].

LUONGO, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1560-1562

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