THIN GERMANIUM NITRIDE FILMS GROWN BY THERMAL-REACTION PROCESS

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[3] BAGEATISHULI GD, 1979, THIN SOLID FILMS, V56, P209

[4] PREPARATION OF GERMANIUM NITRIDE FILMS ON STAINED GERMANIUM CRYSTAL SURFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) : 300 - &

[5] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 370 - 372

[6] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452

[7] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502

[8] Nitrogen compounds of germanium I The preparation and properties of germanic nitride [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1930, 52 : 5160 - 5165

[9] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[10] NAGAI H, 1978, J ELECTROCHEM SOC, V115, P671

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[3] BAGEATISHULI GD, 1979, THIN SOLID FILMS, V56, P209

[4] PREPARATION OF GERMANIUM NITRIDE FILMS ON STAINED GERMANIUM CRYSTAL SURFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) : 300 - &

[5] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 370 - 372

[6] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452

[7] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502

[8] Nitrogen compounds of germanium I The preparation and properties of germanic nitride [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1930, 52 : 5160 - 5165

[9] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[10] NAGAI H, 1978, J ELECTROCHEM SOC, V115, P671