SEMICONDUCTOR LASERS

被引:22
作者
NATHAN, MI
机构
关键词
D O I
10.1364/AO.5.001514
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:1514 / +
页数:1
相关论文
共 149 条
[21]  
BENOIT C, 1964, CR HEBD ACAD SCI, V259, P2200
[22]  
BENOIT C, 1965, CR HEBD ACAD SCI, V261, P5428
[23]  
BENOIT C, 1963, SOLID STATE COMMUN, V1, P148
[24]  
BENOIT C, 1964, SOLID STATE COMMUN, V2, P145
[25]   LASER CONDITIONS IN SEMICONDUCTORS [J].
BERNARD, MGA ;
DURAFFOURG, G .
PHYSICA STATUS SOLIDI, 1961, 1 (07) :699-703
[26]   PRESSURE-TUNED PBSE DIODE LASER (HE GAS PRESSURE 1 TO 7000 BARS VARIATION OF EMISSION PEAK AND REFRACTIVE INDEX 77 DEGREES K E) [J].
BESSON, JM ;
BUTLER, JF ;
CALAWA, AR ;
PAUL, W ;
REDIKER, RH .
APPLIED PHYSICS LETTERS, 1965, 7 (08) :206-&
[27]  
BESSON JM, PRIVATE COMMUNICATIO
[28]   LIGHT-MODULATED DATA LINK [J].
BOERSHIG, BA .
IEEE TRANSACTIONS ON BROADCASTING, 1964, BC10 (01) :4-&
[29]   P-N JUNCTION LASERS [J].
BURNS, G ;
NATHAN, MI .
PROCEEDINGS OF THE IEEE, 1964, 52 (07) :770-+
[30]   EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J].
BURNS, G ;
DILL, FH ;
NATHAN, MI .
PROCEEDINGS OF THE IEEE, 1963, 51 (06) :947-&