USE OF ELECTRON-BEAM CHARGING FOR IN-PROCESS INSPECTION OF SILICIDE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR GATE ELECTRODE ISOLATION

被引：2

作者：

JENKINS, KA

AGNELLO, PD

BRIGHT, AA

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.

引用

页码：312 / 314

页数：3

共 6 条

[1]

BOYE C, COMMUNICATION

[2] A 2-NS CYCLE, 3.8-NS ACCESS 512-KB CMOS ECL SRAM WITH A FULLY PIPELINED ARCHITECTURE [J].