MICROSTRUCTURE ISOLATION TESTING USING A SCANNING ELECTRON-MICROSCOPE

被引:4
作者
MAHANTSHETTI, SS
ATON, TJ
GALE, RJ
BENNETTLILLEY, MH
机构
关键词
D O I
10.1063/1.102927
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new form of testing is described that is suitable for verifying isolation in many forms of microstructures. Excess charge is deposited on the microstructures by a scanning electron microscope (SEM) beam. On elements of the microstructures that are isolated, this excess charge induces a voltage contrast that is detected at the same time by the same beam. Isolation to approximately 2×1011 Ω can be verified. The method is simple and fast, requiring only a standard SEM and simple test structures.
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页码:2310 / 2312
页数:3
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